IRD UV PHOTODIODES Absolute UV Silicon Photodiodes - AXUV Series

When these diodes are exposed to photons of energy greater than 1.12 eV (wavelength less than 1100 nm) electron-hole pairs (carriers) are created. These photogenerated carriers are separated by the p-n junction electric field and a current proportional to the number of electron-hole pairs created flows through an external circuit. For the majority of XUV photons, about 3.7 eV energy is required to generate one electron-hole pair. Thus more than one electron-hole pair is generally created by these photons. This results in device quantum efficiencies (electrons seen by an external circuit per incident photon) much greater than unity, which increase linearly with photon energy.